TOSHIBA
Discrete Semiconductors
Transistor
Silicon
PNP Epitaxial Type (PCT Process)
For General Purpose Switching and Amplifier Applications
Features • Complementary to 2SC3281 • Recommended for 100W High Fidelity Audio Frequency
- Amplifier Output Stage
Absolute Maximum Ratings (Ta = 25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range
VCBO -200
V
VCEO -200
V
VEBO -5
V
IC -15 A
IB -1.
5 A
PC 150 W
Tj 150 °C Tstg -55 ~ 150 °C
Electrical Characteristics (Ta = 25°C)
CHARACTERISTIC
SYMBOL
TEST CONDITION
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