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DC COMPONENTS CO.
, LTD.
R
2SB1426
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF
PNP EPITAXIAL PLANAR
TRANSISTOR
Description
Designed for DC-to-DC converter applications.
TO-92
Pinning
1 = Emitter 2 = Collector 3 = Base
.
190(4.
83) .
170(4.
33)
.
190(4.
83) .
170(4.
33) 2 Typ 2 Typ
o o
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -20 -20 -6 -3 750 +150 -55 to +150 Unit V V V A mW
o o
.
500 Min (12.
70) .
022(0.
56) .
014(0.
36) .
100 Typ (2.
54) .
148(3.
76) .
132(3.
36) .
022(0.
5...