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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
,LTD
TO-92 Plastic-Encapsulate
Transistors
D965
FEATURES
TRANSISTOR£¨
NPN £©
TO¡ª 92
1.
EMITTER
Power dissipation PCM : 0.
75 W£¨ Tamb=25¡æ£© Collector current ICM : 5 A Collector-base voltage V(BR)CBO : 42 V Operating and storage junction temperature range T J £¬ T stg: -55¡æto +150¡æ ELECTRICAL CHARACTERISTICS£¨ Tamb=25¡æ
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE£¨ 1£© DC current gain HFE£¨ 2£© HFE£¨ 3£© Collector-emitter saturation voltage VCE(sat)
2.
COLLE...