DatasheetsPDF.com

D90N03L

STMicroelectronics
Part Number D90N03L
Manufacturer STMicroelectronics
Description N-Channel Power MOSFET
Published Aug 29, 2016
Detailed Description STD90N03L STD90N03L-1 N-channel 30V - 0.005Ω - 80A - DPAK/IPAK STripFET™ III Power MOSFET General features Type STD90N...
Datasheet PDF File D90N03L PDF File

D90N03L
D90N03L


Overview
STD90N03L STD90N03L-1 N-channel 30V - 0.
005Ω - 80A - DPAK/IPAK STripFET™ III Power MOSFET General features Type STD90N03L STD90N03L-1 VDSS 30V 30V RDS(on) 0.
0057Ω 0.
0057Ω 1.
Pulse width limited by safe operating area ■ RDS(on)*Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold device ID 80A (1) 80A (1) Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology.
This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved.
Applications ■ Switching applications 3 2 1 IPAK 3 1 DPAK Internal schematic diagram Order codes Part number STD90N03L STD90N03L-1 Marking D90N03L D90N03L-1 Package DPAK IPAK Packaging Tape & reel Tube October 2006 Rev1 1/16 www.
st.
com 16 Content Content STD90N03L - STD90N03L-1 1 Electrical ratings .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
3 2 Electrical characteristics .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
4 2.
1 Electrical characteristics (curves) .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
6 3 Test circuit .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
8 4 Package mechanical data .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
11 5 Packaging mechanical data .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
14 6 Revision history .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
15 2/16 STD90N03L - STD90N03L-1 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS Drain-source voltage (VGS = 0) VGS Gate-source voltage ID(1) Drain current (continuous) at TC = 25°C ID IDM(2) Drain current (continuous) at TC=100°C Drain current (pulsed) PTOT Total dissipation at TC = 25°C Derating factor EAS(3) Single pulse avalanche energy TJ Operating junc...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)