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Part Number
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IRF7101PBF |
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Manufacturer
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International Rectifier |
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Description
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Power MOSFET |
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Published
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Aug 14, 2007 |
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Detailed Description
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www.DataSheet4U.com
PD - 95162
IRF7101PbF
Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSF...
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Datasheet
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IRF7101PBF
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Overview
www.
DataSheet4U.
com
PD - 95162
IRF7101PbF
Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description
l
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 8 7
D1 D1 D2 D2
VDSS = 20V RDS(on) = 0.
10Ω ID = 3.
5A
3 4
6 5
Top View
Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a...
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