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IRF7101PBF

International Rectifier
Part Number IRF7101PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Aug 14, 2007
Detailed Description www.DataSheet4U.com PD - 95162 IRF7101PbF Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSF...
Datasheet PDF File IRF7101PBF PDF File

IRF7101PBF
IRF7101PBF

Overview
www.
DataSheet4U.
com PD - 95162 IRF7101PbF Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 8 7 D1 D1 D2 D2 VDSS = 20V RDS(on) = 0.
10Ω ID = 3.
5A 3 4 6 5 Top View Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
The package is designed for vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.
8W is possible in a typical PCB mount application.
SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 100°C IDM PD @TC = 25°C VGS dv/dt TJ, TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ‚ Junction and Storage Temperature Range Sodering Temperature, for 10 seconds Max.
3.
5 2.
3 14 2.
0 0.
016 ± 12 3.
0 -55 to + 150 300(1.
6mm from case) Units A W W/°C V V/nS °C Thermal Resistance Ratings RθJA Maximum Junction-to-Ambient „ Parameter Min.
––– Typ.
––– Max 62.
5 Units °C/W 10/6/04 IRF7101PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)DSS ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate...


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