Part Number
|
IRF9953PBF |
Manufacturer
|
International Rectifier |
Description
|
Power MOSFET |
Published
|
Aug 14, 2007 |
Detailed Description
|
com
PD - 95477
IRF9953PbF
Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l ...
|
Datasheet
|
IRF9953PBF
|
Overview
com
PD - 95477
IRF9953PbF
Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated l Lead-Free Description
l
HEXFET® Power MOSFET
S1 G1 S2 G2
1 2 3 4 8 7
D1 D1 D2 D2
VDSS = -30V RDS(on) = 0.
25Ω
6 5
Top View
Recommended upgrade: IRF7306 or IRF7316 Lower profile/smaller equivalent: IRF7506
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides...
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