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IRF9953PBF

International Rectifier
Part Number IRF9953PBF
Manufacturer International Rectifier
Description Power MOSFET
Published Aug 14, 2007
Detailed Description www.DataSheet4U.com PD - 95477 IRF9953PbF Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l ...
Datasheet PDF File IRF9953PBF PDF File

IRF9953PBF
IRF9953PBF

Overview
www.
DataSheet4U.
com PD - 95477 IRF9953PbF Generation V Technology l Ultra Low On-Resistance l Dual P-Channel MOSFET l Surface Mount l Very Low Gate Charge and Switching Losses l Fully Avalanche Rated l Lead-Free Description l HEXFET® Power MOSFET S1 G1 S2 G2 1 2 3 4 8 7 D1 D1 D2 D2 VDSS = -30V RDS(on) = 0.
25Ω 6 5 Top View Recommended upgrade: IRF7306 or IRF7316 Lower profile/smaller equivalent: IRF7506 Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
The package is designed for vapor phase, infra red, or wave soldering techniques.
SO-8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol VDS V GS ID IDM IS PD EAS IAR EAR dv/dt TJ, TSTG Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… TA = 25°C TA = 70°C Maximum Units V Pulsed Drain Current Continuous Source Current (Diode Conduction) TA = 25°C Maximum Power Dissipation … TA = 70°C Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dtƒ Junction and Storage Temperature Range -30 ± 20 -2.
3 -1.
8 -10 1.
6 2.
0 1.
3 57 -1.
3 0.
20 -5.
0 -55 to + 150 A W mJ A mJ V/ ns °C Thermal Resistance Ratings Maximum Junction-to-Ambient… Parameter Symbol RθJA Limit 62.
5 Units °C/W 7/16/04 IRF9953PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ ...


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