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PD - 94381E
INSULATED GATE BIPOLAR
TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
IRGB6B60KD IRGS6B60KD IRGSL6B60KD
VCES = 600V IC = 7.
0A, TC=100°C
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
G E
tsc 10µs, TJ=150°C
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel
VCE(on) typ.
= 1.
8V
TO-220AB IRGB6B60KD
D2Pak IRGS6B60KD Max.
600 13 7.
0 26 26 13 7.
0 26 ± 20 90 36 -55 to +150
TO-262...