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IRGSL6B60KD

International Rectifier
Part Number IRGSL6B60KD
Manufacturer International Rectifier
Description INSULATED GATE BIPOLAR TRANSISTOR
Published Aug 17, 2007
Detailed Description www.DataSheet4U.com PD - 94381E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KD IRG...
Datasheet PDF File IRGSL6B60KD PDF File

IRGSL6B60KD
IRGSL6B60KD

Overview
www.
DataSheet4U.
com PD - 94381E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KD IRGS6B60KD IRGSL6B60KD VCES = 600V IC = 7.
0A, TC=100°C Features • Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
G E tsc > 10µs, TJ=150°C Benefits • Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
n-channel VCE(on) typ.
= 1.
8V TO-220AB IRGB6B60KD D2Pak IRGS6B60KD Max.
600 13 7.
0 26 26 13 7.
0 26 ± 20 90 36 -55 to +150 TO-262 IRGSL6B60KD Units V Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current„ Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec.
A V W °C 300 (0.
063 in.
(1.
6mm) from case) Thermal Resistance Parameter RθJC RθJC RθCS RθJA RθJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Junction-to-Ambient (PCB Mount, steady state)‚ Weight Min.
––– ––– ––– ––– ––– ––– Typ.
––– ––– 0.
50 ––– ––– 1.
44 Max.
1.
4 4.
4 ––– 62 40 ––– Units °C/W g www.
irf.
com 1 8/18/04 www.
DataSheet4U.
com IRG/B/S/SL6B60KD Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES ∆V(BR)CES/∆TJ VCE(on) VGE(th) ∆VGE(th)/∆TJ gfe ICES VFM IGES Parameter Min.
Typ.
Collector-to-Emitter Breakdown Voltage 600 ––– Temperature Coeff.
of Breakdown Voltage ––– 0.
3 Collector-...


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