Part Number
|
GI80LS02 |
Manufacturer
|
GTM |
Description
|
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Sep 4, 2007 |
Detailed Description
|
com
Pb Free Plating Product
ISSUED DATE :2006/02/15 REVISED DATE :
GI80LS02
Description
N-CHANNEL ENH...
|
Datasheet
|
GI80LS02
|
Overview
com
Pb Free Plating Product
ISSUED DATE :2006/02/15 REVISED DATE :
GI80LS02
Description
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
25V 8m 75A
The GI80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
Features
*Low On-resistance *Simple Drive Requirement *Fast Switching Speed
Package Dimensions TO-251
REF.
A B C D E F
Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
60 0.
90
REF.
G H J K L M
Millimeter Min.
Max.
0.
50 0.
70 2...
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