DatasheetsPDF.com

GI80LS02

GTM
Part Number GI80LS02
Manufacturer GTM
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 4, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/02/15 REVISED DATE : GI80LS02 Description N-CHANNEL ENH...
Datasheet PDF File GI80LS02 PDF File

GI80LS02
GI80LS02

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2006/02/15 REVISED DATE : GI80LS02 Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 25V 8m 75A The GI80LS02 used advanced design and process to achieve low gate charge, low on-resistance and fast switching performance.
The through-hole version (TO-251) is available for low-profile applications and suited for low voltage applications such as DC/DC converters.
Features *Low On-resistance *Simple Drive Requirement *Fast Switching Speed Package Dimensions TO-251 REF.
A B C D E F Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
60 0.
90 REF.
G H J K L M Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0.
45 0.
60 0.
90 1.
50 5.
40 5.
80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 Tj, Tstg Ratings 25 ±20 75 52 250 96 0.
75 -55 ~ +150 Unit V V A A A W W/ Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Thermal Data Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Symbol Rthj-case Rthj-amb Value 1.
4 110 Unit /W /W GI80LS02 Page: 1/4 ISSUED DATE :2006/02/15 REVISED DATE : Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Min.
25 1.
0 Typ.
0.
03 20 19 3 12 9 90 25 97 1290 630 205 1.
4 Max.
3.
0 ±100 1 100 8 12 30 2070 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=10V, ID=30A VGS= ±20V VDS=25V, VGS=0 VDS=20V, VGS=0 VGS=10V, ID=40A VGS=4.
5V, ID=30A ID=30A VDS=20V VGS=4.
5V VDS=15V ID=30A VGS=10V RG=3.
3 RD=0.
5 VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Symbol BVDSS BVDSS / Tj Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-So...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)