Part Number
|
GI1182 |
Manufacturer
|
GTM |
Description
|
PNP SILICON EPITAXIAL PLANAR TRANSISTOR |
Published
|
Sep 4, 2007 |
Detailed Description
|
com
CORPORATION
G I 11 8 2
Description Features
The GI1182 is designed for medium power amplifier appli...
|
Datasheet
|
GI1182
|
Overview
com
CORPORATION
G I 11 8 2
Description Features
The GI1182 is designed for medium power amplifier applications.
Low collector saturation voltage : VCE(sat)=-0.
5V(Typ.
)
ISSUED DATE :2005/10/06 REVISED DATE :
P NP S ILI CO N EP ITAX I AL PL ANAR T RANSI STOR
Package Dimensions TO-251
REF.
A B C D E F
Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
60 0.
90
REF.
G H J K L M
Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0.
45 0.
60 0.
90 1.
50 5.
40 5.
80
Absolute Maximum Ratings at Ta = 25
Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Cu...
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