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GI1182

GTM
Part Number GI1182
Manufacturer GTM
Description PNP SILICON EPITAXIAL PLANAR TRANSISTOR
Published Sep 4, 2007
Detailed Description www.DataSheet4U.com CORPORATION G I 11 8 2 Description Features The GI1182 is designed for medium power amplifier appli...
Datasheet PDF File GI1182 PDF File

GI1182
GI1182

Overview
www.
DataSheet4U.
com CORPORATION G I 11 8 2 Description Features The GI1182 is designed for medium power amplifier applications.
Low collector saturation voltage : VCE(sat)=-0.
5V(Typ.
) ISSUED DATE :2005/10/06 REVISED DATE : P NP S ILI CO N EP ITAX I AL PL ANAR T RANSI STOR Package Dimensions TO-251 REF.
A B C D E F Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 7.
20 7.
80 2.
30 REF.
0.
60 0.
90 REF.
G H J K L M Millimeter Min.
Max.
0.
50 0.
70 2.
20 2.
40 0.
45 0.
55 0.
45 0.
60 0.
90 1.
50 5.
40 5.
80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse, Pw=100ms) Total Power Dissipation(TC=25 ) Symbol Tj Tstg VCBO VCEO VEBO IC IC PD Ratings +150 -55~+150 -40 -32 -5 -2 -3 10 Unit V V V A A W Electrical Characteristics (Ta = 25 Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *hFE fT Cob Min.
-40 -32 -5 82 Typ.
-500 100 50 , unless other...


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