Part Number
|
GJ08P10 |
Manufacturer
|
GTM |
Description
|
P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Sep 4, 2007 |
Detailed Description
|
com
Pb Free Plating Product
ISSUED DATE :2006/02/21 REVISED DATE :
GJ08P10
P-CHANNEL ENHANCEMENT MODE ...
|
Datasheet
|
GJ08P10
|
Overview
com
Pb Free Plating Product
ISSUED DATE :2006/02/21 REVISED DATE :
GJ08P10
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
-100V 200m -8A
Description
The GJ08P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications.
*Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *RoHS Compliant
Features
Package Dimensions
TO-252
REF.
A B C D E F S
Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90
REF.
G H J K L M R
Millim...
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