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GJ08P10

Part Number GJ08P10
Manufacturer GTM
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 4, 2007
Detailed Description com Pb Free Plating Product ISSUED DATE :2006/02/21 REVISED DATE : GJ08P10 P-CHANNEL ENHANCEMENT MODE ...
Datasheet GJ08P10




Overview
com Pb Free Plating Product ISSUED DATE :2006/02/21 REVISED DATE : GJ08P10 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -100V 200m -8A Description The GJ08P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications.
*Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *RoHS Compliant Features Package Dimensions TO-252 REF.
A B C D E F S Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90 REF.
G H J K L M R Millim...






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