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GJ08P10

Part Number	GJ08P10
Manufacturer	GTM
Description	P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published	Sep 4, 2007
Detailed Description	www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/02/21 REVISED DATE : GJ08P10 P-CHANNEL ENHANCEMENT MODE ...
Datasheet	GJ08P10 PDF File

Overview

www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2006/02/21 REVISED DATE : GJ08P10 P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -100V 200m -8A Description The GJ08P10 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-252 package is universally preferred for all commercial-industrial surface mount applications.
*Simple Drive Requirement *Lower On-resistance *Fast Switching Characteristic *RoHS Compliant Features Package Dimensions TO-252 REF.
A B C D E F S Millimeter Min.
Max.
6.
40 6.
80 5.
20 5.
50 6.
80 7.
20 2.
40 3.
00 2.
30 REF.
0.
70 0.
90 0.
60 0.
90 REF.
G H J K L M R Millim...

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GJ08P10 P-CHANNEL ENHANCEMENT MODE POWER MOSFET - GTM

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