Part Number
|
GT2530 |
Manufacturer
|
GTM |
Description
|
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
Published
|
Sep 13, 2007 |
Detailed Description
|
www.DataSheet4U.com
Pb Free Plating Product
ISSUED DATE :2006/01/23 REVISED DATE :
GT2530
N AND P-CHANNEL ENHANCEMENT ...
|
Datasheet
|
GT2530
|
Overview
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DataSheet4U.
com
Pb Free Plating Product
ISSUED DATE :2006/01/23 REVISED DATE :
GT2530
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Description
N-CH BVDSS 30V N-CH RDS(ON) 72m N-CH ID 3.
3A P-CH BVDSS -30V N-CH RDS(ON) 150m N-CH ID -2.
3A
The GT2530 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial surface mount applications.
Features
*Low Gate Change *Low On-resistance *RoHS Compliant
Package Dimensions
REF.
A B C D E F
Millimeter Min.
2.
70 2.
60 1.
40 0.
30 0 0° Max.
3.
10 3.
00 1.
80 0.
55 0.
10 10°
REF.
G H I J K L
Dimensions Mi...
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