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GT2530

GTM
Part Number GT2530
Manufacturer GTM
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 13, 2007
Detailed Description www.DataSheet4U.com Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : GT2530 N AND P-CHANNEL ENHANCEMENT ...
Datasheet PDF File GT2530 PDF File

GT2530
GT2530

Overview
www.
DataSheet4U.
com Pb Free Plating Product ISSUED DATE :2006/01/23 REVISED DATE : GT2530 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Description N-CH BVDSS 30V N-CH RDS(ON) 72m N-CH ID 3.
3A P-CH BVDSS -30V N-CH RDS(ON) 150m N-CH ID -2.
3A The GT2530 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device.
The SOT-26 package is universally used for all commercial-industrial surface mount applications.
Features *Low Gate Change *Low On-resistance *RoHS Compliant Package Dimensions REF.
A B C D E F Millimeter Min.
2.
70 2.
60 1.
40 0.
30 0 0° Max.
3.
10 3.
00 1.
80 0.
55 0.
10 10° REF.
G H I J K L Dimensions Millimeter 1.
90 REF.
1.
20 REF.
0.
12 REF.
0.
37 REF.
0.
60 REF.
0.
95 REF.
Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Ratings N-channel P-channel Unit V V A A A W W/ 30 ±20 3.
3 2.
6 10 1.
14 0.
01 -30 ±20 -2.
3 -1.
8 -10 Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range -55 ~ +150 Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Rthj-a Value 110 Unit /W GT2530 Page: 1/7 ISSUED DATE :2006/01/23 REVISED DATE : N-Channel Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient unless otherwise specified) Typ.
0.
02 4 3 1 2 6 8 11 2 170 50 35 0.
5 Max.
3.
0 ±100 1 25 72 125 5 270 0.
8 pF ns nC Unit V V/ V S nA uA uA m Test Conditions VGS=0, ID=250uA Reference to 25 , ID=1mA VDS=VGS, ID=250uA VDS=5V, ID=3A VGS= ±20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=3A VGS=4.
5V, ID=2A ID=3A VDS=25V VGS=4.
5V VDS=15V ID=1A VGS=10V RG=3.
3 RD=15 VGS=0V VDS=25V f=1.
0MHz f=1.
0MHz Symbol BVDSS BVDSS / Tj Min.
30 1.
0 - Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-So...


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