Part Number
|
SIGC121T120R2C |
Manufacturer
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Infineon Technologies |
Description
|
IGBT |
Published
|
Sep 15, 2007 |
Detailed Description
|
www.DataSheet4U.com
SIGC121T120R2C
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology 200µm chip • low turn-o...
|
Datasheet
|
SIGC121T120R2C
|
Overview
www.
DataSheet4U.
com
SIGC121T120R2C
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology 200µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor
This chip is used for: • power module BSM 75GD120DN2 Applications: • drives
C
G
E
Chip Type
VCE
ICn 75A
Die Size 11.
08 X 11.
08 mm2
Package sawn on foil
Ordering Code Q67041A4682-A003
SIGC121T120R2C 1200V
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot S...
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