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SIGC121T120R2CS

Infineon Technologies
Part Number SIGC121T120R2CS
Manufacturer Infineon Technologies
Description IGBT
Published Sep 15, 2007
Detailed Description www.DataSheet4U.com SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-...
Datasheet PDF File SIGC121T120R2CS PDF File

SIGC121T120R2CS
SIGC121T120R2CS

Overview
www.
DataSheet4U.
com SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor This chip is used for: • IGBT Modules Applications: • drives, SMPS, resonant applications C G E Chip Type VCE ICn 75A Die Size 11.
08 X 11.
08 mm2 Package sawn on foil Ordering Code Q67050A4074-A003 SIGC121T120R2CS 1200V MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 11.
08 X 11.
08 8 x (2.
99 x 1.
97) 1.
46 x 0.
8 122.
8 / 99.
6 180 150 90 106 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.
65mm ; max 1.
2mm store...


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