Part Number
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SIGC121T120R2CL |
Manufacturer
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Infineon Technologies |
Description
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IGBT |
Published
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Sep 15, 2007 |
Detailed Description
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SIGC121T120R2CL
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology • 180µm chip • low tur...
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Datasheet
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SIGC121T120R2CL
|
Overview
com
SIGC121T120R2CL
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology • 180µm chip • low turn-off losses • positive temperature coefficient • easy paralleling • integrated gate resistor
This chip is used for: • power module BSM75GD120DLC Applications: • drives
C
G
E
Chip Type
VCE
ICn 75A
Die Size 11.
08 X 11.
08 mm2
Package sawn on foil
Ordering Code Q67041A4686-A003
SIGC121T120R2CL 1200V
MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended St...
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