com SIGC121T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor This chip is used for: • IGBT Modules Applications: • drives, SMPS, resonant applications C G E Chip Type VCE ICn 75A Die Size 11.
08 X 11.
08 mm2 Package sawn on foil Ordering Code Q67050A4074-A003 SIGC121T120R2CS 1200V MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond ...

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)