Part Number
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SIGC223T120R2CL |
Manufacturer
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Infineon Technologies |
Description
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IGBT |
Published
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Sep 15, 2007 |
Detailed Description
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www.DataSheet4U.com
SIGC223T120R2CL
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology • 180µm chip • short c...
|
Datasheet
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SIGC223T120R2CL
|
Overview
www.DataSheet4U.com
SIGC223T120R2CL
IGBT Chip in NPT-technology
FEATURES: • 1200V NPT technology • 180µm chip • short circuit prove • positive temperature coefficient • easy paralleling
This chip is used for: • IGBT-Modules BSM150GB120DLC Applications: • drives
C
G
E
Chip Type
VCE
ICn
Die Size 14.4 x 15.5 mm2
Package sawn on foil
Ordering Code Q67050-A4286A101
SIGC223T120R2CL 1200V 150A
MECHANICAL PARAMETER: Raster size Area total / active Emitter pad size Gate pad size Thickness Wafer size Flat position Max.possible chips per wafer Passivation frontside Emitter metalization Collector metalization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 14.4 x 15.5...
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