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SIGC223T120R2CS

Infineon Technologies
Part Number SIGC223T120R2CS
Manufacturer Infineon Technologies
Description IGBT
Published Sep 15, 2007
Detailed Description www.DataSheet4U.com Preliminary SIGC223T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chi...
Datasheet PDF File SIGC223T120R2CS PDF File

SIGC223T120R2CS
SIGC223T120R2CS

Overview
www.
DataSheet4U.
com Preliminary SIGC223T120R2CS IGBT Chip in NPT-technology FEATURES: • 1200V NPT technology 175µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling • integrated gate resistor This chip is used for: • IGBT Modules Applications: • drives, SMPS, resonant applications C G E Chip Type VCE ICn Die Size 14.
4 x 15.
5 mm2 Package sawn on foil Ordering Code tbd SIGC223T120R2CS 1200V 150A MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 14.
4 X 15.
5 8x( 3.
67x6.
77 ) 1.
49 x 1.
51 223.
5 / 189.
9 175 150 90 54 pcs Photoimide 3200 nm Al Si 1% 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.
65mm ; max 1.
2mm store in ...


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