www.
DataSheet4U.
com SIGC57T120R3 IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC57T120R3 VCE 1200V ICn 50A Die Size 7.
6 x 7.
53 mm2 Package sawn on foil Ordering Code Q67050A4106-A001 MECHANICAL PARAMETER: Raster size Emitter pad size Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 7.
6 x 7.
53 4x(2.
98 x 2.
9...

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