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SIGC57T120R3L

Infineon Technologies
Part Number SIGC57T120R3L
Manufacturer Infineon Technologies
Description IGBT
Published Sep 15, 2007
Detailed Description www.DataSheet4U.com SIGC57T120R3L IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-of...
Datasheet PDF File SIGC57T120R3L PDF File

SIGC57T120R3L
SIGC57T120R3L

Overview
www.
DataSheet4U.
com SIGC57T120R3L IGBT Chip FEATURES: • 1200V Trench + Field Stop technology • 120µm chip • low turn-off losses • short tail current • positive temperature coefficient • easy paralleling 3 This chip is used for: • power module C Applications: • drives G E Chip Type SIGC57T120R3L VCE 1200V ICn 50A Die Size 7.
6 x 7.
53 mm2 Package sawn on foil Ordering Code Q67050A4267-A101 MECHANICAL PARAMETER: Raster size Emitter pad size ( include gate pad ) Gate pad size Area total / active Thickness Wafer size Flat position Max.
possible chips per wafer Passivation frontside Emitter metallization Collector metallization Die bond Wire bond Reject Ink Dot Size Recommended Storage Environment 7.
6 x 7.
53 6.
08 x 6.
05 1.
14 x 1.
14 57.
2 / 42.
8 120 150 90 246 pcs Photoimide 3200 nm AlSiCu 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding electrically conductive glue or solder Al, <500µm ∅ 0.
65mm ; max 1.
2mm store in original container, in dry nitrogen, < 6 month ...


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