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Part Number
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LNA2903L |
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Manufacturer
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Panasonic Semiconductor |
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Description
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GaAs Infrared Light Emitting Diode |
|
Published
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Mar 22, 2005 |
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Datasheet
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LNA2903L
|
Features
High-power output, high-efficiency : Ie = 9 mW/sr (min.) Emitted light spectrum suited for silicon photodetectors Good radiant power output linearity with respect to input current Wide directivity : θ = 20 deg. (typ.) Transparent epoxy resin package
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