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LNA2901L

Panasonic Semiconductor
Part Number LNA2901L
Manufacturer Panasonic Semiconductor
Description GaAs Infrared Light Emitting Diode
Published Mar 22, 2005
Detailed Description Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.25 2-0.8 max. 2-0.6...
Datasheet PDF File LNA2901L PDF File

LNA2901L
LNA2901L

Overview
Infrared Light Emitting Diodes LNA2901L GaAs Infrared Light Emitting Diode Unit : mm Not soldered 2.
25 2-0.
8 max.
2-0.
6±0.
15 2.
54 For optical control systems Features High-power output, high-efficiency : Ie = 9 mW/sr (min.
) Emitted light spectrum suited for silicon photodetectors Long lead-wire type 26.
3±1.
0 24.
3±1.
0 5.
25±0.
3 1.
5 7.
65±0.
2 1.
0 ø5.
0±0.
2 Transparent epoxy resin package Parameter Power dissipation Forward current (DC) Pulse forward current Reverse voltage (DC) Operating ambient temperature Storage temperature * Symbol PD IF IFP* VR Topr Tstg Ratings 160 50 1 3 –25 to +85 – 40 to +100 Unit mW mA A V ˚C ˚C ø6.
0±0.
2 Absolute Maximum Ratings (Ta = 25˚C) 2 1 1: Cathode 2:...


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