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ISSUED DATE :2005/09/05 REVISED DATE :
GESD1060
Description Features
NPN EPITAXIAL PLANAR T RANSISTOR
The GESD1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching.
Low Collector-Emitter Saturation Voltage : VCE (sat) =0.
4V (Max.
) @ IC=3A, IB=0.
3A,
Package Dimensions
REF.
A b c D E L4 L5
Millimeter Min.
Max.
4.
40 4.
80 0.
76 1.
00 0.
36 0.
50 8.
60 9.
00 9.
80 10.
4 14.
7 15.
3 6.
20 6.
60
REF.
c1 b1 L e L1 Ø A1
Millimeter Min.
Max.
1.
25 1.
45 1.
17 1.
47 13.
25 14.
25 2.
54 REF.
2.
60 2.
89 3.
71 3.
96 2.
60 2.
80
Absolute Maximum Ratings (TA=25 )
Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Vol...