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GESD1060

GTM
Part Number GESD1060
Manufacturer GTM
Description NPN EPITAXIAL PLANAR TRANSISTOR
Published Sep 27, 2007
Detailed Description ISSUED DATE :2005/09/05 REVISED DATE : GESD1060 Description Features NPN EPITAXIAL PLANAR T RANSIS...
Datasheet PDF File GESD1060 PDF File

GESD1060
GESD1060

Overview
ISSUED DATE :2005/09/05 REVISED DATE : GESD1060 Description Features NPN EPITAXIAL PLANAR T RANSISTOR The GESD1060 is designed for relay drivers, high-speed inverters, converters and other general large-current switching.
Low Collector-Emitter Saturation Voltage : VCE (sat) =0.
4V (Max.
) @ IC=3A, IB=0.
3A, Package Dimensions REF.
A b c D E L4 L5 Millimeter Min.
Max.
4.
40 4.
80 0.
76 1.
00 0.
36 0.
50 8.
60 9.
00 9.
80 10.
4 14.
7 15.
3 6.
20 6.
60 REF.
c1 b1 L e L1 Ø A1 Millimeter Min.
Max.
1.
25 1.
45 1.
17 1.
47 13.
25 14.
25 2.
54 REF.
2.
60 2.
89 3.
71 3.
96 2.
60 2.
80 Absolute Maximum Ratings (TA=25 ) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Vol...


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