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DataSheet4U.
com CORPORATION G SB AS16 Description V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A ISSUED DATE :2006/12/12 REVISED DATE : S U R F A C E M O U N T, S W I T C H I N G D I O D E The GSBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.
The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package.
Package Dimensions REF.
A A1 A2 D E HE Millimeter Min.
Max.
0.
80 1.
10 0 0.
10 0.
80 1.
00 1.
80 2.
20 1.
15 1.
35 1.
80 2.
40 REF.
L1 L b c e Q1 Millimeter Min.
Max.
0.
42 REF.
0.
15 0.
35 0.
25 0.
40 0.
10 0.
25 0.
65 REF.
0.
15 BSC.
Absolute Maximum Ratings at TA = 25 Parameter Junction Temperature ...

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