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GSBAS16

GTM
Part Number GSBAS16
Manufacturer GTM
Description SWITCHING DIODE
Published Sep 28, 2007
Detailed Description www.DataSheet4U.com CORPORATION G SB AS16 Description V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A ISSUED DATE :2006/12...
Datasheet PDF File GSBAS16 PDF File

GSBAS16
GSBAS16

Overview
www.
DataSheet4U.
com CORPORATION G SB AS16 Description V O LT A G E 8 5 V, C U R R E N T 2 5 0 m A ISSUED DATE :2006/12/12 REVISED DATE : S U R F A C E M O U N T, S W I T C H I N G D I O D E The GSBAS16 is designed for high-speed switching application in hybrid thick and thin-film circuits.
The devices is manufactured by the silicon epitaxial planar process and packed in a plastic surface mount package.
Package Dimensions REF.
A A1 A2 D E HE Millimeter Min.
Max.
0.
80 1.
10 0 0.
10 0.
80 1.
00 1.
80 2.
20 1.
15 1.
35 1.
80 2.
40 REF.
L1 L b c e Q1 Millimeter Min.
Max.
0.
42 REF.
0.
15 0.
35 0.
25 0.
40 0.
10 0.
25 0.
65 REF.
0.
15 BSC.
Absolute Maximum Ratings at TA = 25 Parameter Junction Temperature Storage Temperature Reverse Voltage Repetitive Reverse Voltage Forward Current Repetitive Forward Current Forward Surge Current (1ms) Total Power Dissipation Symbol Tj Tstg VR VRRM IO IFM IFSM PD Ratings +150 -65 ~ +150 85 85 250 500 1000 225 V V mA mA mA mW Unit Electrical Characteristics (at TA =...


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