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MITSUBISHI HVIGBT MODULES
CM1200DB-34N
4th-Version HVIGBT (High Voltage Insulated Gate Bipolar
Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM1200DB-34N
q IC .
.
.
.
1200A q VCES 1700V q Insulated Type q 2-element in a Pack q Cu Baseplate q Trench Gate IGBT : CSTBT™ q Soft Reverse Recovery Diode
APPLICATION Motor control, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
130±0.
5 57±0.
25 57±0.
25 4 - M8 NUTS Dimensions in mm
4(E1)
2(C2) C2
20±0.
1
E1
4
2
G1
124±0.
25
140±0.
5
G2 C1 3(C1) 1(E2) E2
3
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