DatasheetsPDF.com

CM1200DB-34N

Mitsubishi Electric
Part Number CM1200DB-34N
Manufacturer Mitsubishi Electric
Description IGBT Module
Published Oct 4, 2007
Detailed Description www.DataSheet4U.com MITSUBISHI HVIGBT MODULES CM1200DB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Tra...
Datasheet PDF File CM1200DB-34N PDF File

CM1200DB-34N
CM1200DB-34N

Overview
www.
DataSheet4U.
com MITSUBISHI HVIGBT MODULES CM1200DB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM1200DB-34N q IC .
.
.
.
1200A q VCES 1700V q Insulated Type q 2-element in a Pack q Cu Baseplate q Trench Gate IGBT : CSTBT™ q Soft Reverse Recovery Diode APPLICATION Motor control, High Reliability Converters / Inverters, DC choppers OUTLINE DRAWING & CIRCUIT DIAGRAM 130±0.
5 57±0.
25 57±0.
25 4 - M8 NUTS Dimensions in mm 4(E1) 2(C2) C2 20±0.
1 E1 4 2 G1 124±0.
25 140±0.
5 G2 C1 3(C1) 1(E2) E2 3 1 30±0.
2 E1 G1 C1 C2 G2 E2 CIRCUIT DIAGRAM 6 - M4 NUTS 53±0.
2 16±0.
2 18±0.
2 40±0.
2 44±0.
2 57±0.
2 6 - φ 7 MOUNTING HOLES 55.
2±0.
3 screwing depth min.
7.
7 11.
85±0.
2 screwing depth min.
16.
5 5±0.
2 35±0.
2 11.
5±0.
2 14±0.
2 38 +1 –0 LABEL HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Jul.
2005 29.
5±0.
5 5±0.
2 28 +1 –0 MITSUBISHI HVIGBT MODULES CM1200DB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Top Tstg Viso tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Maximum short circuit pulse width VGE = 0V, Tj = 25°C VCE = 0V, Tj = 25°C TC = 80°C Pulse Pulse TC = 25°C, IGBT part Conditions Ratings 1700 ±20 1200 2400 1200 2400 6900 –40 ~ +150 –40 ~ +125 –40 ~ +125 4000 10 Unit V V A A A A W °C °C °C V µs (Note 1) (Note 1) RMS, sinusoidal, f = 60Hz, t = 1min.
VCC = 1200V, VCES ≤ 1700V, VGE = 15V Tj = 125°C ELECTRICAL CHARACTERISTICS Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg VEC (Note 2) td(on) tr Eon td(off) tf Eoff trr (Note 2) Irr (Note 2) Qrr...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)