Part Number
|
MG200Q2YS60A |
Manufacturer
|
Toshiba Semiconductor |
Description
|
High Power Switching Applications Motor Control Applications |
Published
|
Oct 4, 2007 |
Detailed Description
|
www.DataSheet4U.com
MG200Q2YS60A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG200Q2YS60A (1200V/200A 2in1)
High Power ...
|
Datasheet
|
MG200Q2YS60A
|
Overview
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DataSheet4U.
com
MG200Q2YS60A
TOSHIBA IGBT Module Silicon N Channel IGBT
MG200Q2YS60A (1200V/200A 2in1)
High Power Switching Applications Motor Control Applications
· · · ·
Integrates a complete half bridge power circuit and fault-signal output circuit in one package.
(short circuit and over temperature) The electrodes are isolated from case.
Low thermal resistance VCE (sat) = 2.
4 V (typ.
)
Equivalent Circuit
C1
5 6 7 FO E1/C2
4 1 2 3
OT
FO
E2 Signal terminal 1.
5.
G (L) G (H) 2.
6.
FO (L) FO (H) 3.
7.
E (L) E (H) 4.
8.
VD Open
1
2001-08-28
MG200Q2YS60A
Package Dimensions: 2-123C1B
Unit: mm
10.
5 0.
8
122 1.
0 110 0.
3
R6
15.
3
4–
JAPAN E2 C1
5.
5
15.
24
20.
5 0.
8 20.
5 0.
8
25.
...
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