Part Number
|
2SJ630 |
Manufacturer
|
Sanyo Semicon Device |
Description
|
General-Purpose Switching Device Applications |
Published
|
Oct 7, 2007 |
Detailed Description
|
Ordering number : ENA0489
2SJ630
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
2SJ63...
|
Datasheet
|
2SJ630
|
Overview
Ordering number : ENA0489
2SJ630
SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
2SJ630
Features
• • •
General-Purpose Switching Device Applications
Low ON-resistance.
Ultrahigh-speed switching.
1.
8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.
8mm) Tc=25°C Conditions Ratings --12 ±8 --6 --24 1.
5 3.
5 150 --55 to +150 Unit V V A A W W °C °C
Electrical Characteristics at Ta=25°C
Paramet...
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