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Freescale Semiconductor Technical Data
Document Number: MRF6P24190H Rev.
1, 3/2007
RF Power Field Effect
Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed primarily for large - signal output applications at 2450 MHz.
Device is suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1900 mA, Pout = 190 Watts Power Gain — 13.
2 dB Drain Efficiency — 46.
2% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 3...