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MRF6P24190HR6

Part Number	MRF6P24190HR6
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistor
Published	Oct 8, 2007
Detailed Description	www.DataSheet4U.com Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev. 1, 3/2007 RF Power Field...
Datasheet	MRF6P24190HR6 PDF File

Overview

www.
DataSheet4U.
com Freescale Semiconductor Technical Data Document Number: MRF6P24190H Rev.
1, 3/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed primarily for large - signal output applications at 2450 MHz.
Device is suitable for use in industrial, medical and scientific applications.
• Typical CW Performance at 2450 MHz, VDD = 28 Volts, IDQ = 1900 mA, Pout = 190 Watts Power Gain — 13.
2 dB Drain Efficiency — 46.
2% • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2340 MHz, 190 Watts CW Output Power Features • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Qualified Up to a Maximum of 3...

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MRF6P24190HR6 RF Power Field Effect Transistor - Freescale Semiconductor

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