PD - 95039 l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF7313PbF HEXFET® Power MOSFET S1 1 G1 2 8 D1 7 D1 VDSS = 30V S2 3 6 D2 G2 4 5 D2 RDS(on) = 0.
029Ω Top View The SO-8 has been modified th...

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