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F7313

International Rectifier
Part Number F7313
Manufacturer International Rectifier
Description Power MOSFET
Published Oct 23, 2007
Detailed Description PD - 95039 l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Fully Avalanch...
Datasheet PDF File F7313 PDF File

F7313
F7313

Overview
PD - 95039 l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Fully Avalanche Rated l Lead-Free Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
IRF7313PbF HEXFET® Power MOSFET S1 1 G1 2 8 D1 7 D1 VDSS = 30V S2 3 6 D2 G2 4 5 D2 RDS(on) = 0.
029Ω Top View The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
With these improvements, multiple devices can be used in an application with dramatically reduced board space.
The package is designed for vapor phase, infra red, or wave soldering techniques.
SO-8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol Maximum Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current… TA = 25°C TA = 70°C ID Pulsed Drain Current IDM Continuous Source Current (Diode Conduction) IS Maximum Power Dissipation … TA = 25°C TA = 70°C PD Single Pulse Avalanche Energy ‚ EAS 30 ± 20 6.
5 5.
2 30 2.
5 2.
0 1.
3 82 Avalanche Current IAR 4.
0 Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ EAR dv/dt 0.
20 5.
8 Junction and Storage Temperature Range TJ, TSTG -55 to + 150 Units V A W mJ A mJ V/ ns °C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient… Symbol RθJA Limit 62.
5 Units °C/W 10/7/04 IRF7313PbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS Drain-to-Source Breakdown Voltage 30 ––– ––– V VGS = 0V, ID = 250µA ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficien...


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