www.
DataSheet4U.
com
DFP630
N-Channel MOSFET
Features
RDS(on) (Max 0.
4 )@VGS=10V Gate Charge (Typical 44nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested
2.
Drain
BVDSS = 200V
1.
Gate
RDS(ON) = 0.
4 ohm ID = 9A
3.
Source
General Description
This N-channel enhancement mode field-effect power
transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics.
The TO-220 pkg is well suited for DC-DC converter and SCorrection in color-monitor system.
TO-220
1 2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS...