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DFP630

DnI
Part Number DFP630
Manufacturer DnI
Description N-Channel MOSFET
Published Nov 3, 2007
Detailed Description www.DataSheet4U.com DFP630 N-Channel MOSFET Features RDS(on) (Max 0.4 )@VGS=10V Gate Charge (Typical 44nC) Improved dv/...
Datasheet PDF File DFP630 PDF File

DFP630
DFP630

Overview
www.
DataSheet4U.
com DFP630 N-Channel MOSFET Features RDS(on) (Max 0.
4 )@VGS=10V Gate Charge (Typical 44nC) Improved dv/dt Capability High ruggedness 100% Avalanche Tested 2.
Drain BVDSS = 200V 1.
Gate RDS(ON) = 0.
4 ohm ID = 9A 3.
Source General Description This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply.
Also, especially designed to minimize rds(on) , low gate charge and high rugged avalanche characteristics.
The TO-220 pkg is well suited for DC-DC converter and SCorrection in color-monitor system.
TO-220 1 2 3 Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) Derating Factor above 25 °C Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds.
(Note 2) (Note 1) (Note 3) (Note 1) Parameter Value 200 9 5.
8 36 Units V A A A V mJ mJ V/ns W W/°C °C °C ±30 180 7.
8 5.
5 78 0.
62 - 55 ~ 150 300 Thermal Characteristics Symbol RθJC RθCS RθJA Oct, 2004.
Rev.
0.
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Case to Sink Thermal Resistance, Junction-to-Ambient Value Min.
- Typ.
0.
5 - Max.
1.
61 62.
5 Units °C/W °C/W °C/W 1/7 Copyright@ D&I Semiconductor Co.
, Ltd.
, Korea .
All rights reserved.
www.
DataSheet4U.
com DFP630 Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS/ TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature coefficient Drain-Source Leakage Current Gate-Source Leakage, Forward Gate-source Leakage, Reverse VGS = 0V, ID = 250uA ID = 250uA, referenced to 25 °C VDS = 200V, VGS = 0V VDS = 160V, TC = 125 °C VGS = 25V, VDS =...


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