DATA SHEET
SILICON POWER
TRANSISTOR
2SD1692
NPN SILICON EPITAXIAL
TRANSISTOR (DARLINGTON CONNECTION)
FEATURES
• High DC current gain due to Darlington connection • Large current capacity and low VCE(sat) • Large power dissipation TO-126 type power
transistor • Complementary
transistor: 2SB1149
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Total power dissipation Junction temperature Storage temperature
VCBO VCEO VEBO IC(DC) IC(pulse)* PT (Ta = 25°C) PT (Tc = 25°C)
Tj Tstg
* PW ≤ 10 ms, duty cycle ≤ 50%
Ratings 150 100 8.
0 ±3.
0...