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Part Number
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SI8901EDB |
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Manufacturer
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Vishay Siliconix |
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Description
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Bi-Directional P-Channel MOSFET |
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Published
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Dec 9, 2007 |
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Detailed Description
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www.DataSheet4U.com
SPICE Device Model Si8901EDB
Vishay Siliconix
Bi-Directional P-Channel 20-V (D-S) MOSFET
CHARACTER...
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Datasheet
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SI8901EDB
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Overview
www.
DataSheet4U.
com
SPICE Device Model Si8901EDB
Vishay Siliconix
Bi-Directional P-Channel 20-V (D-S) MOSFET
CHARACTERISTICS
• P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics
DESCRIPTION
The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS.
The subcircuit mode is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-to-5V gate drive.
The saturated output impedance is best fit at the gate bias near the thresho...
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