DatasheetsPDF.com

SI8901EDB

Vishay Siliconix
Part Number SI8901EDB
Manufacturer Vishay Siliconix
Description Bi-Directional P-Channel MOSFET
Published Dec 9, 2007
Detailed Description www.DataSheet4U.com SPICE Device Model Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V (D-S) MOSFET CHARACTER...
Datasheet PDF File SI8901EDB PDF File

SI8901EDB
SI8901EDB

Overview
www.
DataSheet4U.
com SPICE Device Model Si8901EDB Vishay Siliconix Bi-Directional P-Channel 20-V (D-S) MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range • Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics DESCRIPTION The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS.
The subcircuit mode is extracted and optimized over the −55 to 125°C temperature ranges under the pulsed 0-to-5V gate drive.
The saturated output impedance is best fit at the gate bias near the threshold voltage.
A novel gate-to-drain feedback capacitance network is used to model the gate charge characteristics while avoiding convergence difficulties of the switched Cgd model.
All model parameter values are optimized to provide a best fit to the measured electrical data and are not intended as an...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)