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2SJ332(L), 2SJ332(S)
Silicon P-Channel MOS FET
November 1996 Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching
regulator, DC-DC converter
Outline
DPAK-2 4 4 1 1 D G 1.
Gate 2.
Drain 3.
Source 4.
Drain S 2
2
3
3
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2SJ332(L), 2SJ332(S)
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at TC = 2...