Part Number
|
H5N3011P |
Manufacturer
|
Renesas Technology |
Description
|
N-Channel MOSFET |
Published
|
Dec 28, 2007 |
Detailed Description
|
H5N3011P
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low leakage current • High...
|
Datasheet
|
H5N3011P
|
Overview
H5N3011P
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low leakage current • High speed switching
Outline
TO-3P
D
G
S
1 2 3
Absolute Maximum Ratings
Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Body-Drain diode reverse Drain peak current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%
2.
Value at Tc = 25°C 3.
STch = 25°C, Tch ≤ 150°C
Symbol
VDSS
VGSS
ID
ID
Note1 (pulse)
IDR
IDR
Note1 (pulse)
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
REJ03...
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