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H5N3011P

Part Number	H5N3011P
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Oct 5, 2020
Detailed Description	isc N-Channel MOSFET Transistor INCHANGE Semiconductor H5N3011P ·FEATURES ·With TO-3PN packaging ·High speed switching...
Datasheet	H5N3011P PDF File

Overview

isc N-Channel MOSFET Transistor INCHANGE Semiconductor H5N3011P ·FEATURES ·With TO-3PN packaging ·High speed switching ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 300 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 88 IDM Drain Current-Single Pulsed 176 PD Total Dissipation 150 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(c...

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