SSM3K121TU
TOSHIBA Field Effect
Transistor Silicon N-Channel MOS Type
SSM3K121TU
Power Management Switch Applications
High-Speed Switching Applications
• 1.
5 V drive • Low ON-resistance:
Ron = 140 mΩ (max) (@VGS = 1.
5 V) Ron = 93 mΩ (max) (@VGS = 1.
8 V) Ron = 63 mΩ (max) (@VGS = 2.
5 V) Ron = 48 mΩ (max) (@VGS = 4.
0 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage Gate-Source voltage
Drain current
DC Pulse
Drain power dissipation
Channel temperature Storage temperature range
VDS
20
V
VGSS
± 10
V
ID
3.
2
A
IDP
6.
4
PD (Note 1)
800
mW
PD (Note 2)
500
Tch
150
°C
Tstg
−55 to 150
°C
Note: Using continuously under he...