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SSM3K121TU

Toshiba Semiconductor
Part Number SSM3K121TU
Manufacturer Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Published Feb 14, 2008
Detailed Description SSM3K121TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K121TU Power Management Switch Applications...
Datasheet PDF File SSM3K121TU PDF File

SSM3K121TU
SSM3K121TU

Overview
SSM3K121TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type SSM3K121TU Power Management Switch Applications High-Speed Switching Applications • 1.
5 V drive • Low ON-resistance: Ron = 140 mΩ (max) (@VGS = 1.
5 V) Ron = 93 mΩ (max) (@VGS = 1.
8 V) Ron = 63 mΩ (max) (@VGS = 2.
5 V) Ron = 48 mΩ (max) (@VGS = 4.
0 V) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-Source voltage Gate-Source voltage Drain current DC Pulse Drain power dissipation Channel temperature Storage temperature range VDS 20 V VGSS ± 10 V ID 3.
2 A IDP 6.
4 PD (Note 1) 800 mW PD (Note 2) 500 Tch 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/ voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Mounted on a ceramic board.
(25.
4 mm × 25.
4 mm × 0.
8 t, Cu Pad: 645 mm2 ) Note 2: Mounted on a FR4 board.
(25.
4 mm × 25.
4 mm × 1.
6 t, Cu Pad: 645 mm2 ) Electrical Characteristics (Ta = 25°C) Unit: mm 2.
1±0.
1 1.
7±0.
1 0.
3-+00.
.
015 1 2 3 2.
0±0.
1 0.
65±0.
05 0.
166±0.
05 0.
7±0.
05 UFM 1: Gate 2: Source 3: Drain JEDEC ― JEITA ― TOSHIBA 2-2U1A Weight: 6.
6 mg (typ.
) Characteristics Drain-Source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-Source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate−Source Charge Gate−Drain Charge Switching time Turn-on time Turn-off time Drain-Sou...


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